Park, Byong-Guk

From QCLab
Prof. Byong-Guk Park (KAIST)


  • Ph.D., Materials Science and Engineering, KAIST (2003)
  • M.S. Materials Science and Engineering, KAIST (1999)
  • B.S. Metallurgical Engineering, Hanyang University (1997)

Professional Experiences

  • (Dec 2011 - Current) Assistant/Associate Professor, Materials Science and Engineering, KAIST
  • (Jun 2006 - Dec 2011) Research staff in Hitachi Cambridge Laboratory, Cavendish Laboratory
  • (Oct 2009 - Dec 2011) Associate Member of St. Edmunds College at University of Cambridge
  • (May 2003 - May 2006) Post-doctoral researcher at Univeristy of Twente

Selected Publications

[1] Y.-W. Oh, B. G. Park et al, “Field-free switching of perpendicular magnetization through spin-orbit torque in antiferromagnet/ferromagnet/oxide structure”, Nature Nanotechnology (online) (2016)
[2] T. Shiino, B. G. Park et al, “Antiferromagnetic Domain Wall Motion Driven by Spin-Orbit Torques”, Phys. Rev. Lett., 117, 087203 (2016)
[3] D.-J. Kim, B. G. Park et al, “Utilization of the antiferromagnetic IrMn electrode in spin thermoelectric devices and their beeficial hybrid for thermopiles", Advanced Functional Materials (online) (2016)
[4] S. Cho, B. G. Park et al, “Large spin Hall magnetoresistance and its correlation to the spin-orbit torque in W/CoFeB/MgO structures”, Scientific Reports (2015)
[5] K. D. Lee, B. G. Park et al, “Thermoelectric Signal Enhancement by Reconciling the spin Seebeck and anomalous Nernst effect in Ferromagnet/Non-magnet Multilayers”, Scientific Reports (2015)
[6] B. G. Park, et al, “A spin-valve like magnetoresistance of an antiferromagnet based tunnel junction”, Nature Materials 10, 347 (2011)
[7] J. Wunderlich, B. G. Park et al, “Spin Hall effect transistor”, Science 300, 1801 (2010)
[8] J. Wunderlich, A. C. Irvine, J. Sinova, B. G. Park, et al, “Spin-injection Hall effect in a planar photovoltaic cell”, Nature Physics 5, 675 (2009)
[9] B. G. Park, et al, “Tunneling anisotropic magnetoresistance in multilayer-(Co/Pt)/AlOx/Pt structures”, Phys. Rev. Let. 100, 087204 (2008)