Growth and application of Dirac materials: graphene and topological insulator
- Speaker: Seung-Hyun Chun (Sejong University)
- Date: Monday February 15, 2016 17:00
- Place: Jeongho Seminar Room
New materials possessing Dirac-cone surface states have been discovered in the 21st century, and the research of truly two-dimensional transport has begun. In addition to the interests on the fundamental physics, the potential of futuristic application is also intensively being explored. Here, we summarize our activities in the growth and application of graphene and topological insulator thin films. With directly grown graphene by plasma enhanced chemical vapor deposition, we demonstrate high-performance light emitting diodes and bright visible light bulb. Furthermore, simple graphene patterns have been obtained without the use of catalysts or lithography. High quality Bi2Se3 thin films were fabricated by molecular beam epitaxy. With the help of van der Waals epitaxy, ordered growth of topological insulator films were accomplished on amorphous substrates. The transport properties at low temperature show the expected modulation by the gate voltage. Our approach for ordered growth of Bi2Se3 on amorphous dielectric surfaces presents considerable advantages for the fabrication of topological insulator heterojunctions with amorphous insulator or dielectric thin films.
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